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Transistors, fundamental theory Lesson 43

We wanted to address this issue so you know, but so deep, so shallow, transistor theory.

To understand regarding the transistor, we analyze the molecular structure of matter.

We always along the lines of water in several studies of electronics, this study also do: By dividing repeatedly a specific amount of water to reach the smallest particle possible, of course, without altering its chemical we arrive at a water molecule. We understand then that a molecule is the minimum amount of a substance.

We already have a water molecule, but we can further divide, within 2 composite elements: hydrogen and oxygen. These elements are presented in the form of atoms, to obtain a water molecule must exist "2" hydrogen atoms and "1" oxygen atom.

In our study of the transistors will deal with the atoms of germanium, silicon, antimony. Arsenic, aluminum and gallium.


Germanium and its atom:

Germanium atomGermanium is the most used, or at least one of the most used in the manufacture of transistors. A germanium atom consists of a nucleus which is surrounded by several chains of electrons and illustrated in the figure above. Its core consists of 32 protons, which are themselves the main part of its mass. We have seen in other lessons that protons have a positive charge of electricity.

The core is surrounded by 32 electrons, which revolve in fixed orbits. The four electrons orbit are not so strongly attracted by the nucleus, as are the orbits following. These electrons are given the name of valence electrons (see figure 1b) shows the resulting net charge of 4 protons in the nucleus and 4 electrons in the outer orbit.

Silicon atomSILICON AND ITS ATOM:

This is another element used in making transistors and illustrated in the figure above, we see 14 protons in the nucleus and 10 electrons in inner orbits, as in the germanium atom valence electrons are illustrated in the outer orbit, such and as the germanium is 4. Figure 2a corresponds to the silicon atom and Figure 2b the resulting net charge of the nucleus and electrons, as explained about the germanium atom.

Valence electronsAntimony and arsenic are also used for making transistors, in the illustration above we can see the valence electrons, both of antimony (Fig. 3), such as aluminum and gallium (Figure 4).

In the first case we have 5 protons in the nucleus and 5 valence electrons, for the second, we find 3 protons in the nucleus and 3 valence electrons.

CRYSTAL STRUCTURES:

Molecular structure

The elements of crystal structures have the ability to acquire a structure, forgive the repetition, very stable crystal. The most popular of these is the diamond. In this crystalline form rings of adjacent atoms valence intertwine. This phenomenon of junction between the rings is known as valence bond formation of covalency, germanium also has this property. In the illustration above is disclosed as described in Figure 5a.

Once we understand the structure of atoms, namely the valence electrons, and we know if a particular item is classified as a conductor or insulator, that the degree of difficulty with which electrons can be dislodged from the outer orbit. The elements in which electrons can not be evicted easily fall into bad drivers, while in which electrons are dislodged easily are called good conductors.

When an item in which their characteristics are set within two, are called semi-conductors. These are semi-conductors which constitute the basic elements used in making transistors.

Two more semi-conductor elements used in making transistors are germanium and silicon. Transistor to work as is necessary to control the electrical properties of semi-conductor material. The control is obtained by adding minute amounts of impurities. The impurity can be any of several elements such as antimony, arsenic, or aluminum, gallium. The proportion of impurities in relation to germanium may be based on one part per ten million (1 / 10, 000,000). Prove two types of semi-conductors: TYPE "N" and "P", this depends on the kind of impurity used.

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Posted on 08 Feb 2010 by Administrador
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